Electrophoretic Deposition of Carbon Nanotubes on 3-Amino-Propyl-Triethoxysilane (APTES) Surface Functionalized Silicon Substrates

Fabrication of uniform thin coatings of multi-walled carbon nanotubes (MWCNTs) by electrophoretic deposition (EPD) on semiconductor (silicon) substrates with 3-aminopropyl-triethoxysilane (APTES) surface functionalization has been studied extensively in this report. The gradual deposition and eventual film formation of the carbon nanotubes (CNTs) is greatly assisted by the Coulombic force of attraction existing between the positively charged -NH₂ surface groups of APTES and the acid treated, negatively charged nanotubes migrating towards the deposition surfaces. The remarkable deposition characteristics of the CNT coatings by EPD in comparison to the dip coating method and the influence of isopropyl (IPA)-based CNT suspension in the fabricated film quality has also been revealed in this study. The effect of varying APTES concentration (5%-100%) on the Raman spectroscopy and thickness of the deposited CNT film has been discussed in details, as well. The deposition approach has eliminated the need of metal deposition in the electrophoretic deposition approach and, therefore, establishes a cost-effective, fast and entirely room temperature-based fabrication strategy of CNT thin films for a wide range of next generation electronic applications.